Figure 2: Diode Recovery Test Circuit & Waveforms Figure 3: Displacement current path and Body diode reverse recovery current path within the power MOSFET structure 2.3 UIS vs. DV/dt: When a voltage is applied to the power MOSFET well above its Vds rating, a critical electric field is reached at the p-base/n-epi junction. Thanks Owen, The body diode is connected in reverse to the drain/source polarity of the FET, so if the FET is conducting would mean the body diode is reverse biased, so it can never conduct. P-channel MOSFET would also work using a slightly different configuration, however the P channels are seldom preferred as switches due to their high RDSon.
DIOFET is a proprietary process that monolithically integrates a power MOSFET with a Schottky diode into a single Silicon chip. The integrated Schottky reduces the forward voltage drop of the body diode by almost 50% and also has a lower reverse recovery charge.
In application, this means the conduction and switching losses are reduced, and overall, the circuit will operate at a higher efficiency with a reduced operating temperature. In addition, the DIOFET is an avalanche rugged process and the devices have a low gate capacitance ratio to reduce the risk of shoot-through currents.
Mosfet Diode Forward Voltage
The DIOFET is well suited for Point of Load (PoL) DC-DC converters used in computing, telecoms and industrial applications including:
Fet Diode Connection
- Laptops, Netbooks and Notebooks
- Set-Top Boxes
- Servers and Desktop Computers
- Telecom Equipment